REORIENTATION TRANSITION IN A THIN MAGNETIC-FILM

被引：14

作者：

POLITI, P

RETTORI, A

PINI, MG

PESCIA, D

机构：

[1] INFM,I-50125 FLORENCE,ITALY

[2] CNR,IST ELETTRON QUANTIST,I-50127 FLORENCE,ITALY

[3] ETH ZURICH,HPT C22,FKP MIKROSTRUKT FORSCH,CH-8093 ZURICH,SWITZERLAND

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷 / pt 1期

关键词：

D O I：

10.1016/0304-8853(94)01567-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the reorientation transition in a thin ferromagnetic film between a perpendicularly magnetized state and an in-plane magnetized one, at the growing of the temperature T and the number of planes N. In the framework of a renormalization group approach, we find the boundaries between the three (perpendicularly magnetized, in-plane magnetized, paramagnetic) regions. A maximum in the reorientation temperature T-R(N) is predicted.

引用

页码：647 / 648

页数：2

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