ELECTRONIC-PROPERTIES OF HYDROGEN-DERIVED COMPLEXES IN SILICON

被引：31

作者：

CHADI, DJ

PARK, CH

机构：

[1] NEC Research Institute, Princeton, NJ 08540

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.52.8877

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic and electronic structure of atomic, diatomic, and triatomic H-derived complexes in Si are examined through ab initio pseudopotential calculations. Bond-centered atomic H is found to have highly localized donor and acceptor states within the band gap of Si. Triatomic H-derived complexes that are more stable than atomic or molecular H are identified.

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页码：8877 / 8880

页数：4

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