ELECTRONIC-PROPERTIES OF HYDROGEN-DERIVED COMPLEXES IN SILICON

被引：31
作者：
CHADI, DJ
PARK, CH
机构：
[1] NEC Research Institute, Princeton, NJ 08540
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.52.8877
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The atomic and electronic structure of atomic, diatomic, and triatomic H-derived complexes in Si are examined through ab initio pseudopotential calculations. Bond-centered atomic H is found to have highly localized donor and acceptor states within the band gap of Si. Triatomic H-derived complexes that are more stable than atomic or molecular H are identified.
引用
收藏
页码：8877 / 8880
页数：4
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