AN X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF VOLTAGE BIAS IMPLANTATION AND NITROGEN ETCHING OF ALUMINUM

Aluminum nitride (AIN) was produced on the surface of aluminum metal by nitrogen (N2) etching at ion energies of 6–8 keV. An electrical potential bias was applied to the sample during etching to enable a study of the effect of such a bias on the formation of the AIN. The results show that AIN will form during etching, although any oxygen present will preferentially react to form the oxide. We find an unusual peak in the N Is region, shifted 7.5 eV to higher binding energy from the main peak, when etching is performed with oxygen impurities in the nitrogen supply. It is believed that this peak arises from the implantation of N2 into oxidized aluminum. We believe that voltage biasing does not affect the products of nitrogen etching of aluminum. © 1995 American Vacuum Society. © 1995, American Vacuum Society. All rights reserved.