NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引：71

作者：

CAPPY, A ^{[1
]}

VANOVERSCHELDE, A ^{[1
]}

SCHORTGEN, M ^{[1
]}

VERSNAEYEN, C ^{[1
]}

SALMER, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2787 / 2796

页数：10

共 22 条

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