COMMENT ON THE TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MBE-GROWTH-INDUCED DEFECT LINES

被引:11
作者
EAVES, L [1 ]
SKOLNICK, MS [1 ]
HALLIDAY, DP [1 ]
机构
[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 20期
关键词
D O I
10.1088/0022-3719/19/20/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L445 / L446
页数:2
相关论文
共 6 条
[1]   A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
EAVES, L ;
HALLIDAY, DP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27) :L705-L709
[2]  
HALLIDAY DP, 1984, 13TH P INT C DEF SEM, P1005
[3]  
KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[4]   STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
SKOLNICK, MS ;
HARRIS, TD ;
TU, CW ;
BRENNAN, TM ;
STURGE, MD .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :427-429
[5]  
SKOLNICK MS, 1986, PHYS REV B
[6]   TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH INDUCED DEFECT LINES IN GAAS [J].
STEINER, T ;
THEWALT, MLW ;
KOTELES, ES ;
SALERNO, JP .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :257-259