THERMIONIC-FIELD EMISSION FROM INTERFACE STATES AT GRAIN-BOUNDARIES IN SILICON

被引：44
作者：
DEGROOT, AW
MCGONIGAL, GC
THOMSON, DJ
CARD, HC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.333099
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：312 / 317
页数：6
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