ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS

被引：184

作者：

KUAN, TS

BATSON, PE

JACKSON, TN

RUPPRECHT, H

WILKIE, EL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.332011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6952 / 6957

页数：6

共 10 条

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].

ANDERSON, WT ;

CHRISTOU, A ;

DAVEY, JE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435

[2]

[Anonymous], SEMICOND SEMIMET

[3] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].

BARNES, PA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653

[4] THE IBM COMPUTER - STEM SYSTEM [J].

BATSON, PE ;

TRAFAS, G .

ULTRAMICROSCOPY, 1982, 8 (03) :293-300

[5] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+

[6] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[7] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS [J].

OGAWA, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :406-412

[8] METALLURGICAL AND ELECTRICAL CHARACTERIZATION OF METAL-SEMICONDUCTOR CONTACTS [J].

ROBINSON, GY .

THIN SOLID FILMS, 1980, 72 (01) :129-141

[9] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

WITTMER, M ;

PRETORIUS, R ;

MAYER, JW ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :433-&

[10]

WYCKOFF RWG, 1963, CRYST STRUCT, V1, P122

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