INFLUENCE OF GRAVITY ON CRYSTAL DEFECT FORMATION IN INSB-GASB ALLOYS

被引：31

作者：

YEE, JF

LIN, MC

SARMA, K

WILCOX, WR

机构：

[1] UNIV SO CALIF,MAT SCI DEPT,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,CHEM ENGN DEPT,LOS ANGELES,CA 90007

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1016/0022-0248(75)90088-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：185 / 192

页数：8

共 11 条

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BLOM, GM ;

PLASKETT, TS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1831-&

[3]

LORENTZ HA, 1936, COLLECT PAPERS, V3, P314

[4] OPTICAL ANISOTROPY OF SILICON SINGLE CRYSTALS [J].

PASTRNAK, J ;

VEDAM, K .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2567-&

[5]

VOLTMER FW, 1973, SEMICONDUCTOR SILICO

[6] GAS BUBBLE NUCLEATION DURING CRYSTALLIZATION [J].

WILCOX, WR ;

KUO, VHS .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (04) :221-228

[7]

YU PY, 1972, COMPUTATIONAL SOLID, P7

[8]

1974, ASDASTN20393 NASA TE

[9]

[No title captured]

[10]

1974, 3RD P SPAC PROC S

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