SUBTHRESHOLD DEFECT FORMATION AS A RESULT OF ELECTRON-BOMBARDMENT OF SILICON-CARBIDE

被引：0
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作者：
KODRAU, NV
MAKAROV, VV
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 08期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：960 / 962
页数：3
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