NUMERICAL-ANALYSIS OF ELECTRIC-FIELD INSIDE MESA P+-N-N+ AVALANCHE-DIODES

被引:4
作者
COSTEA, I [1 ]
DASCALU, D [1 ]
机构
[1] POLYTECH INST BUCHAREST,DEPT ELECTR & TELECOMMUN,BUCHAREST,ROMANIA
关键词
D O I
10.1049/el:19740099
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:129 / 131
页数:3
相关论文
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[3]  
COSTEA I, 1973, DEC EL DEP POL I BUC
[4]  
DASCALU D, TO BE PUBLISHED
[5]   TUNING-INITIATED FAILURE IN AVALANCHE DIODES [J].
EVANS, WJ ;
SCHARFETTER, DL ;
JOHNSTON, RL ;
KEY, PL .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :799-+
[6]  
GRANT WN, 1973, J SOLID STATE ELECTR, V16, P1189
[7]  
LEKHOLM A, 1971, IEEE T ELECTRON DEV, VED18, P844