PHOTOLUMINESCENCE FROM HETEROEPITAXIAL (211)B CDTE GROWN ON (211)B GAAS BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

GOLD, JS ^{[1
]}

MYERS, TH ^{[1
]}

GILES, NC ^{[1
]}

HARRIS, KA ^{[1
]}

MOHNKERN, LM ^{[1
]}

YANKA, RW ^{[1
]}

机构：

[1] MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.355088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature (approximately 5 K) photoluminescence spectroscopy was performed on undoped CdTe epilayers grown by molecular beam epitaxy on (211)B oriented bulk GaAs substrates at substrate temperatures ranging from 230 to 275-degrees-C. The emission spectra from all samples studied contained evidence of the diffusion of gallium and arsenic atoms from.the substrate. A broad, low amplitude emission band observed at 1.594 eV was related to the Ga(Cd) donor level in CdTe. Donor-acceptor pair recombination observed at 1.51 eV was due to the substitutional Ga(Cd) donor and As(Te) acceptor. The level.of compensation in the CdTe layers was determined from the energy shift of the donor-acceptor emission peak with excitation power, with the lowest degree of compensation observed in a sample grown at 230-degrees-C. In addition, a bright emission peak was observed at 1.47 eV. This peak, which had been observed previously in homoepitaxial and heteroepitaxial growth of CdTe, was related to electron-hole recombination of a structural defect in the CdTe/GaAs epilayers with an electronic binding energy of approximately 130 meV.

引用

页码：6866 / 6871

页数：6

共 30 条

[1] LUMINESCENCE CHARACTERIZATION OF CDTE-IN GROWN BY MOLECULAR-BEAM EPITAXY [J].

BASSANI, F ;

TATARENKO, S ;

SAMINADAYAR, K ;

BLEUSE, J ;

MAGNEA, N ;

PAUTRAT, JL .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2651-2653

[2]

BELL RO, 1975, SOLID STATE COMMUN, V7, P913

[3] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[4] GROWTH OF HIGH-QUALITY (100)CDTE FILMS ON (100)GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILESTAYLOR, NC ;

YANKA, RW ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSKI, H ;

WOOLHOUSE, GR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :417-418

[5] GROWTH OF (111) CDTE ON TILTED (001) GAAS [J].

CIBERT, J ;

GOBIL, Y ;

SAMINADAYAR, K ;

TATARENKO, S ;

CHAMI, A ;

FEUILLET, G ;

DANG, LS ;

LIGEON, E .

APPLIED PHYSICS LETTERS, 1989, 54 (09) :828-830

[6]

COOPER DE, 1989, P SOC PHOTO-OPT INS, V1106, P88

[7] NOVEL TYPE OF OPTICAL-TRANSITION OBSERVED IN MBE GROWN CDTE [J].

DEAN, PJ ;

WILLIAMS, GM ;

BLACKMORE, G .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (11) :2291-2300

[8]

FANCOU JM, 1985, 13TH INT C DEF SEM W, P1213

[9] A PHOTOLUMINESCENCE COMPARISON OF CDTE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, METALORGANIC CHEMICAL VAPOR-DEPOSITION, AND SPUTTERING IN ULTRAHIGH-VACUUM [J].

FENG, ZC ;

BEVAN, MJ ;

CHOYKE, WJ ;

KRISHNASWAMY, SV .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) :2595-2600

[10] SHALLOW DONORS IN CDTE [J].

FRANCOU, JM ;

SAMINADAYAR, K ;

PAUTRAT, JL .

PHYSICAL REVIEW B, 1990, 41 (17) :12035-12046

← 1 2 3 →