COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS

被引:366
作者
CHAND, N [1 ]
HENDERSON, T [1 ]
KLEM, J [1 ]
MASSELINK, WT [1 ]
FISCHER, R [1 ]
CHANG, YC [1 ]
MORKOC, H [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词
D O I
10.1103/PhysRevB.30.4481
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4481 / 4492
页数:12
相关论文
共 32 条
[1]  
ALTARELLI M, 1979, J PHYS C, V10, pL605
[2]   AN ANOMALY IN THE RELATION OF HALL-COEFFICIENT TO RESISTIVITY IN N-TYPE ALXGA1-XAS [J].
AYABE, M ;
MORI, Y ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :L55-L58
[3]   PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE [J].
BURKEY, BC ;
KHOSLA, RP ;
FISCHER, JR ;
LOSEE, DL .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1095-1102
[4]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[5]   THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].
CHAI, YG ;
WOOD, CEC ;
CHOW, R .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803
[6]   SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].
CHANDRA, A ;
WOOD, CEC ;
WOODARD, DW ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650
[7]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[8]   HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].
COLLINS, DM ;
MARS, DE ;
FISCHER, B ;
KOCOT, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :857-861
[9]   EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].
CRAFORD, MG ;
STILLMAN, GE ;
ROSSI, JA ;
HOLONYAK, N .
PHYSICAL REVIEW, 1968, 168 (03) :867-&
[10]   SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
DRUMMOND, TJ ;
LYONS, WG ;
FISCHER, R ;
THORNE, RE ;
MORKOC, H ;
HOPKINS, CG ;
EVANS, CA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :957-960