THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE

被引：379
作者：
OREILLY, EP
ROBERTSON, J
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] CENT ELECT RES LABS,LEATHERHEAD KT22 7SE,SURREY,ENGLAND
来源：
PHYSICAL REVIEW B | 1983年 / 27卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.27.3780
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3780 / 3795
页数：16
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