THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE

被引：378

作者：

OREILLY, EP

ROBERTSON, J

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] CENT ELECT RES LABS,LEATHERHEAD KT22 7SE,SURREY,ENGLAND

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.27.3780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3780 / 3795

页数：16

共 72 条

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[2] AB-INITIO STUDIES OF INTEROXYGEN BONDING IN O2, HO2, H2O2, O3, HO3, AND H2O3
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NEWTON, MD
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DISTEFANO, TH
EASTMAN, DE
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (24) : 2259 - +
[7] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2
DISTEFANO, TH
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1560 - +
[8] DISTEFANO TH, 1978, PHYSICS SIO2 ITS INT, P382
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