LOW-NOISE GAAS MESFETS

被引：10

作者：

HEWITT, BS ^{[1
]}

COX, HM ^{[1
]}

FUKUI, H ^{[1
]}

DILORENZO, JV ^{[1
]}

SCHLOSSER, WO ^{[1
]}

IGLESIAS, DE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 12期

关键词：

D O I：

10.1049/el:19760238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：309 / 310

页数：2

共 50 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2610-2615

[39] Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets [J].

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[40] LOW-FREQUENCY NOISE AND PHASE NOISE IN MESFETS WITH LTG-GAAS PASSIVATION [J].

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