LOW-NOISE GAAS MESFETS

被引：10
作者：
HEWITT, BS [1 ]
COX, HM [1 ]
FUKUI, H [1 ]
DILORENZO, JV [1 ]
SCHLOSSER, WO [1 ]
IGLESIAS, DE [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
ELECTRONICS LETTERS | 1976年 / 12卷 / 12期
关键词：
D O I：
10.1049/el:19760238
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：309 / 310
页数：2
相关论文
共 50 条
[1]   OPTIMIZATION OF LOW-NOISE GAAS-MESFETS [J].
FUKUI, H ;
DILORENZO, JV ;
HEWITT, BS ;
VELEBIR, JR ;
COX, HM ;
LUTHER, LC ;
SEMAN, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1034-1037
[2]   LOW-NOISE MESFETS FOR ION-IMPLANTED GAAS MMICS [J].
GUPTA, AK ;
SIU, DP ;
IP, KT ;
PETERSEN, WC .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) :1072-1076
[3]   LOW-NOISE MESFETS FOR ION-IMPLANTED GAAS MMICS [J].
GUPTA, AK ;
SIU, DP ;
IP, KT ;
PETERSEN, WC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1850-1854
[4]   MONOLITHIC INTEGRATION OF SURGE PROTECTION DIODES INTO LOW-NOISE GAAS-MESFETS [J].
HAGIO, M ;
KANAZAWA, K ;
NAMBU, S ;
TOHMORI, S ;
OGATA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :892-895
[5]   SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].
OHATA, K ;
ITOH, H ;
HASEGAWA, F ;
FUJIKI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034
[6]   SUPERIOR LOW-NOISE GAAS-MESFETS WITH GRADED CHANNEL GROWN BY MBE [J].
NAIR, VK ;
TAM, G ;
CURLESS, JA ;
KRAMER, GD ;
PEFFLEY, MS ;
TSUI, RK ;
ATKINS, WK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1393-1395
[7]   12 GHZ LOW-NOISE MMIC AMPLIFIER WITH GAAS PULSE-DOPED MESFETS [J].
SHIGA, N ;
NAKAJIMA, S ;
KUWATA, N ;
OTOBE, K ;
SEKIGUCHI, T ;
MATSUZAKI, K ;
HAYASHI, H .
IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (09) :1500-1506
[8]   HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS [J].
FENG, M ;
EU, VK ;
KANBER, H ;
HACKETT, R .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :327-329
[9]   60-GHZ GAAS LOW-NOISE MESFETS BY MOLECULAR-BEAM EPITAXY [J].
CHAO, PC ;
SMITH, PM ;
DUH, KHG ;
HWANG, JCM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1852-1853
[10]   A STUDY OF HIGH-POWER PULSED CHARACTERISTICS OF LOW-NOISE GAAS-MESFETS [J].
JAMES, DS ;
DORMER, L .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (12) :1298-1310
12345