ELECTRON TRAPS IN GAAS1-XPX ALLOYS

被引：23

作者：

CALLEJA, E

MUNOZ, E

GARCIA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：528 / 530

页数：3

共 7 条

[1]

ASPNES DE, 1977, I PHYS C SER B, V33, P110

[2] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].

CRAFORD, MG ;

STILLMAN, GE ;

ROSSI, JA ;

HOLONYAK, N .

PHYSICAL REVIEW, 1968, 168 (03) :867-&

[3]

FERENCZI G, 1980, P INT SCH NEW DEV SE, P116

[4] ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4 [J].

HENNING, ID ;

THOMAS, H .

SOLID-STATE ELECTRONICS, 1982, 25 (04) :325-333

[5] NATIVE LEVELS AND DEGRADATION IN GAAS0.6P0.4 LEDS [J].

LOPEZ, C ;

GARCIA, A ;

GARCIA, F ;

MUNOZ, E .

SOLID-STATE ELECTRONICS, 1979, 22 (01) :81-85

[6] NEW TECHNIQUE FOR IDENTIFICATION OF DEEP-LEVEL TRAP EMISSION TO INDIRECT CONDUCTION MINIMA IN GAAS [J].

MAJERFELD, A ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :259-261

[7] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS [J].

YANG, JJ ;

MOUDY, LA ;

SIMPSON, WI .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :244-246

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