MODELING OF TRANSCONDUCTANCE DEGRADATION AND EXTRACTION OF THRESHOLD VOLTAGE IN THIN OXIDE MOSFET

被引：238

作者：

WONG, HS

WHITE, MH

KRUTSICK, TJ

BOOTH, RV

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期

关键词：

D O I：

10.1016/0038-1101(87)90132-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：953 / 968

页数：16

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