ETCHING OF DIAMOND WITH ARGON AND OXYGEN ION-BEAMS

被引:79
作者
WHETTEN, TJ
ARMSTEAD, AA
GRZYBOWSKI, TA
RUOFF, AL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期
关键词
D O I
10.1116/1.572598
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:477 / 480
页数:4
相关论文
共 21 条
[1]  
ANDERSEN HH, 1981, TOP APPL PHYS, V47, P145, DOI [10.1007/3540105212_9, DOI 10.1007/3540105212_9]
[2]   STATIC COMPRESSION OF POLY(METHYL METHACRYLATE TO 100-GPA [J].
CHAN, K ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5395-5396
[3]   PRESSURE CONCENTRATIONS DUE TO PLASTIC-DEFORMATION OF THIN-FILMS OR GASKETS BETWEEN ANVILS [J].
CHAN, KS ;
HUANG, TL ;
GRZYBOWSKI, TA ;
WHETTEN, TJ ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6607-6612
[4]  
CHAN KS, 1977, THESIS CORNELL U
[5]   BEHAVIOR OF SULFUR AT HIGH-PRESSURES AND LOW-TEMPERATURES [J].
GOLOPENTIA, DA ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1328-1331
[6]   STATIC COMPRESSION OF AL2O3 TO 1.2 MBARS (120 GPA) [J].
GUPTA, MC ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :827-828
[7]  
HOLLAND OW, 1983, J APPL PHYS, V54
[8]   TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .1. ION-SOURCE TECHNOLOGY [J].
KAUFMAN, HR ;
CUOMO, JJ ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :725-736
[9]   ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
MAYER, JW ;
ERIKSSON, L ;
PICRAUX, ST ;
DAVIES, JA .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&
[10]   SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES [J].
MAYER, TM ;
BARKER, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :757-763