DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS

被引：48

作者：

CHERN, JGJ ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：178 / 180

页数：3

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[5] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION [J].

LIU, TM ;

OLDHAM, WG .

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[6] A DIRECT MEASUREMENT OF INTERFACIAL CONTACT RESISTANCE [J].

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LINHOLM, LW .

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[7]

SHOCKLEY W, 1964, ALTOR64207 AIR FORC

[8] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS [J].

YU, AYC .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :239-+

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