ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K

被引：117
作者：
SCHUBERT, EF
CUNNINGHAM, JE
TSANG, WT
机构：
来源：
SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 07期
关键词：
D O I：
10.1016/0038-1098(87)90859-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：591 / 594
页数：4
相关论文
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