SI/SIGE QUANTUM-WELL ELECTRON-MOBILITY - MAIN SCATTERING MECHANISMS

被引：1
作者：
TUTOR, J [1 ]
COMAS, F [1 ]
机构：
[1] UNIV HAVANA,DEPT THEORET PHYS,HAVANA 10400,CUBA
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 191卷 / 01期
关键词：
D O I：
10.1002/pssb.2221910113
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Mobility calculations for a symmetrically strained Si/SiGe quantum well are reported considering conduction along the Si channel. The Boltzmann transport theory is applied taking into account two scattering mechanisms:electron scattering by acoustic phonons (via deformation-potential coupling) and electron scattering by ionized impurities (both remote and background). It is compared with experimental results reported by Schaffler et al., where the QW was grown avoiding threading dislocations in the Si channel, and an excellent agreement is achieved. As in our previous works only one adjustable parameter is introduced:the deformation-potential energy.
引用
收藏
页码：121 / 128
页数：8
相关论文
共 19 条
[1]  
ABSTREITER G, 1986, WIN P INT SCH MANT, P136
[2]   ELECTRONIC TRANSPORT-PROPERTIES OF A TWO-DIMENSIONAL ELECTRON-GAS IN A SILICON QUANTUM-WELL STRUCTURE AT LOW-TEMPERATURE [J].
GOLD, A .
PHYSICAL REVIEW B, 1987, 35 (02) :723-733
[3]   SELF-CONSISTENT CALCULATIONS OF THE TWO-DIMENSIONAL ELECTRON-DENSITY IN MODULATION-DOPED SUPERLATTICES [J].
GOMES, VMS ;
CHAVES, AS ;
LEITE, JR ;
WORLOCK, JM .
PHYSICAL REVIEW B, 1987, 35 (08) :3984-3989
[4]  
HERZOG HJ, 1990, S P B, V10
[5]  
HESS K, 1974, APPL PHYS LETT, V35, P484
[6]   SELF-CONSISTENT CALCULATION OF ELECTRONIC STATES IN ALGAAS/GAAS/ALGAAS SELECTIVELY DOPED DOUBLE-HETEROJUNCTION SYSTEMS UNDER ELECTRIC-FIELDS [J].
INOUE, K ;
SAKAKI, H ;
YOSHINO, J ;
HOTTA, T .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4277-4281
[7]  
JORKE H, 1986, J ELECTROCHEM SOC, V133, P989
[8]   STRAINED LAYER SI/SIGE SUPERLATTICES [J].
KASPER, E ;
HERZOG, HJ ;
JORKE, H ;
ABSTREITER, G .
SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (02) :141-146
[9]   EXTREMELY HIGH ELECTRON-MOBILITY IN SI/GEXSI1-X STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
MII, YJ ;
XIE, YH ;
FITZGERALD, EA ;
MONROE, D ;
THIEL, FA ;
WEIR, BE ;
FELDMAN, LC .
APPLIED PHYSICS LETTERS, 1991, 59 (13) :1611-1613
[10]   OBSERVATION OF THE FRACTIONAL QUANTUM HALL-EFFECT IN SI/SIGE HETEROSTRUCTURES [J].
NELSON, SF ;
ISMAIL, K ;
NOCERA, JJ ;
FANG, FF ;
MENDEZ, EE ;
CHU, JO ;
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :64-66
12