SPIN AND QUANTUM INTERFERENCE EFFECTS IN HOPPING CONDUCTIVITY

被引：41

作者：

FRYDMAN, A

OVADYAHU, Z

机构：

[1] The Racah Institute of Physics, The Hebrew University Jerusalem

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期

关键词：

D O I：

10.1016/0038-1098(95)00141-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present results of high field magnetoconductance (MC) measurements on In2O3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.

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页码：745 / 749

页数：5

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