FABRICATION OF GAAS NANOSTRUCTURES WITH A SCANNING TUNNELING MICROSCOPE

被引：60

作者：

SNOW, ES

CAMPBELL, PM

SHANABROOK, BV

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for fabricating GaAs nanostructures with a scanning tunneling microscope (STM) is presented. Utilizing a previously developed Si STM fabrication technique, the STM is used to pattern a thin (5 nm) epitaxial Si layer which is grown on GaAs. The patterned Si layer is used as a mask for wet etching the GaAs. This fabrication technique is quite general and should extend to other material systems provided a surface epitaxial Si layer can be grown.

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页码：3488 / 3490

页数：3

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