HIGH-PRESSURE, LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON IN OXYGEN

被引：0

作者：

SRIVASTAVA, JK ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：291 / 292

页数：2

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