EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON

被引：171

作者：

MAHAN, JE

GEIB, KM

ROBINSON, GY

LONG, RG

YAN, XH

BAI, G

NICOLET, MA

NATHAN, M

机构：

[1] COLORADO RES DEV CORP,DENVER,CO 80293

[2] TEL AVIV UNIV,DEPT ELECTRON DEVICES & MAT & ELECTROMAGNET RADIAT,IL-69978 TEL AVIV,ISRAEL

[3] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.103235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

引用

页码：2126 / 2128

页数：3

共 11 条

[1]

Bauer E., 1975, TOP APPL PHYS, V4, P225

[2] ELECTRICAL INVESTIGATION OF SEMICONDUCTOR-TO-METAL TRANSITION IN FESI2 [J].