DISTRIBUTED FEED BACK SURFACE EMITTING LASER DIODE WITH MULTILAYERED HETEROSTRUCTURE

被引：33

作者：

OGURA, M

HATA, T

YAO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期

关键词：

D O I：

10.1143/JJAP.23.L512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L512 / L514

页数：3

共 8 条

[1] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[2]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[3] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS [J].

NAKAMURA, M ;

AIKI, K ;

UMEDA, J ;

YARIV, A ;

YEN, HW ;

MORIKAWA, T .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :487-488

[4]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[5] GAAS/ALXGA1-XAS MULTILAYER REFLECTOR FOR SURFACE EMITTING LASER DIODE [J].

OGURA, M ;

HATA, T ;

KAWAI, NJ ;

YAO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L112-L114

[6]

OGURA M, 1982, 2ND INT S MOL BEAM E, P69

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

SODA, H ;

IGA, K ;

KITAHARA, C ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330

[8] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J].

VANDERZIEL, JP ;

ILEGEMS, M .

APPLIED OPTICS, 1975, 14 (11) :2627-2630

← 1 →