APPLIED STRESSES, CYCLOTRON MASSES AND CHARGE-DENSITY-WAVES IN SILICON INVERSION LAYERS

被引：24

作者：

KELLY, MJ ^{[1
]}

FALICOV, LM ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 22卷 / 07期

关键词：

D O I：

10.1016/0038-1098(77)90122-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：447 / 450

页数：4

共 15 条

[1]

DORDA G, 1976, P INT C APPLICATION, P113

[2] EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :677-680

[3] SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 18 (06) :743-746

[4]

EISELE I, TO BE PUBLISHED

[5] NON-PARABOLICITY AND TRANSVERSE MASS OF ELECTRON CARRIERS IN SILICON [J].

FALICOV, LM .

SOLID STATE COMMUNICATIONS, 1976, 18 (05) :669-671

[6] ITINERANT ANTIFERROMAGNETISM [J].

FEDDERS, PA ;

MARTIN, PC .

PHYSICAL REVIEW, 1966, 143 (01) :245-&

[7] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW LETTERS, 1976, 37 (15) :1021-1024

[8]

KELLY MJ, TO BE PUBLISHED

[9] CHROMIUM-LIKE MODEL FOR AN ITINERANT ANTIFERROMAGNET [J].

KIMBALL, JC .

PHYSICAL REVIEW, 1969, 183 (02) :533-&

[10]

KOTTHAUS JP, 1976, P INT C APPLICATION, P663

← 1 2 →