COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON

被引：66

作者：

WEBBER, HC

CULLIS, AG

CHEW, NG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期

关键词：

D O I：

10.1063/1.94440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：669 / 671

页数：3

共 21 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2]

Baeri P., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P39

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[4]

Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[5] SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON [J].

BEAN, JC ;

LEAMY, HJ ;

POATE, JM ;

ROZGONYI, GA ;

VANDERZIEL, JP ;

WILLIAMS, JS ;

CELLER, GK .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :881-885

[6] THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF AMORPHOUS-SILICON [J].

BHATTACHARYYA, A ;

STREETMAN, BG ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3611-3617

[7] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[8] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :547-550

[9]

CULLIS AG, UNPUB J CRYST GROWTH

[10] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

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