PHOTOCHEMICAL PATTERN ON P-TYPE GAAS

被引：3

作者：

MOUTONNET, D ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

MATERIALS LETTERS | 1987年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0167-577X(87)90097-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：34 / 36

页数：3

共 9 条

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[3]

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[4] LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION [J].

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[5] PHOTOELECTROCHEMICAL ETCHING OF PARA-GAAS [J].

OSTERMAYER, FW ;

KOHL, PA .

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[6]

PARK SM, 1960, J ELECTROANAL SOC, V107, P427

[7] MASKLESS, CHEMICAL ETCHING OF SUBMICROMETER GRATINGS IN SINGLE-CRYSTALLINE GAAS [J].

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GILGEN, HH ;

OSGOOD, RM ;

SANCHEZ, A .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1083-1085

[8]

Pourbaix M., 1963, ATLAS EQUILIBRES ELE

[9]

TISONE GC, 1983, APPL PHYS LETT, V42, P530, DOI 10.1063/1.93994

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