NEW ACCEPTOR-RELATED COMPENSATION MECHANISMS IN WIDE-BAND GAP SEMICONDUCTORS

被引：2

作者：

SASAKI, T ^{[1
]}

OGUCHI, T ^{[1
]}

KATAYAMAYOSHIDA, H ^{[1
]}

机构：

[1] TOHOKU UNIV, DEPT PHYS, SENDAI, MIYAGI 980, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90231-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

New mechanisms for self-compensation in wide gap semiconductors are proposed. Special attention is paid to p-type ZnSe. In these mechanisms, the dopant in the interstitial sites plays an important role. Based on the fact that ZnSe has strong ionicity, the point charge ionic model is used to investigate the electronic structures of alkali and Group Vb dopants in interstitial sites. It is found that there is a large difference in the electronic structures. The possibility of the self-compensation effect proposed here is discussed for each dopant in accordance with this difference.

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收藏

页码：159 / 163

页数：5

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