ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES

被引：142
作者：
JOYCE, BA
NEAVE, JH
DOBSON, PJ
LARSEN, PK
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2AZ,ENGLAND
[2] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.29.814
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：814 / 819
页数：6
相关论文
共 18 条
[1]   THEORY OF RHEED FOR GENERAL SURFACES [J].
BEEBY, JL .
SURFACE SCIENCE, 1979, 80 (01) :56-61
[2]   ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHIANG, TC ;
LUDEKE, R ;
AONO, M ;
LANDGREN, G ;
HIMPSEL, FJ ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1983, 27 (08) :4770-4778
[3]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843
[4]   DIFFUSE-SCATTERING IN RHEED INDUCED BY LINEAR DISORDERS OF SULFUR SEGRATED ON NICKEL (111) SURFACE [J].
DELESCLUSE, P ;
MASSON, A .
SURFACE SCIENCE, 1980, 100 (02) :423-438
[5]  
DOBSON PJ, 1982, SURF SCI, V119, pL339, DOI 10.1016/0039-6028(82)90177-7
[6]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166
[7]   ATOMIC STEPS ON SINGLE-CRYSTALS - EXPERIMENTAL METHODS AND PROPERTIES [J].
HENZLER, M .
APPLIED PHYSICS, 1976, 9 (01) :11-17
[8]   NEW METHOD FOR THE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - A-SN(001) AND INSB(001) SURFACES [J].
HERNANDEZCALDERON, I ;
HOCHST, H .
PHYSICAL REVIEW B, 1983, 27 (08) :4961-4965
[9]  
HOLLOWAY S, 1983, J PHYS C, V11, pL247
[10]   COMPARATIVE LEED AND RHEED EXAMINATION OF STEPPED SURFACES - APPLICATION TO CU(111) AND GAAS(001) VICINAL SURFACES [J].
HOTTIER, F ;
THEETEN, JB ;
MASSON, A ;
DOMANGE, JL .
SURFACE SCIENCE, 1977, 65 (02) :563-577
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