NEW 2-TERMINAL C-MNOS MEMORY CELLS

被引：3

作者：

KOIKE, S ^{[1
]}

KANO, G ^{[1
]}

KASHIWAKURA, A ^{[1
]}

TERAMOTO, I ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 09期

关键词：

D O I：

10.1109/T-ED.1976.18532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1036 / 1041

页数：6

共 9 条

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FROHMANB.D .

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[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[3] NEW LAMBDA-TYPE NEGATIVE-RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE [J].

KANO, G ;

IWASA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :448-449

[4]

LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[5] THEORY OF NEGATIVE-RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS [J].

MIZUNO, H ;

KANO, G ;

TAKAGI, H ;

TERAMOTO, I .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) :313-317

[6]

ROSS EC, 1969, RCA REV, V30, P366

[7] COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES [J].

TAKAGI, H ;

KANO, G .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (06) :509-515

[8]

UCHIDA Y, 1975, ISSCC DIGEST TECH

[9]

UCHIDA Y, 1972, DEC IEEE INT EL DEV

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