HIGH-TEMPERATURE CAMERA FOR INSITU EXAMINATION OF SEMICONDUCTOR CRYSTALS BY X-RAY TOPOGRAPHY

被引:0
|
作者
SMOLSKII, IL
DILBARYAN, GA
ROZHANSKII, VN
机构
来源
INDUSTRIAL LABORATORY | 1984年 / 50卷 / 05期
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:465 / 467
页数:3
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