HIGH-TEMPERATURE CAMERA FOR INSITU EXAMINATION OF SEMICONDUCTOR CRYSTALS BY X-RAY TOPOGRAPHY

被引：0

作者：

SMOLSKII, IL

DILBARYAN, GA

ROZHANSKII, VN

机构：

来源：

INDUSTRIAL LABORATORY | 1984年 / 50卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：465 / 467

页数：3

相关论文

共 7 条

[1] CHERNOV AA, 1979, DOKL AKAD NAUK SSSR+, V248, P356
[2] CHERNOV AA, 1980, KRISTALLOGRAFIYA+, V25, P821
[3] CHIKAMA I, 1977, J CRYST GROWTH, V39, P328
[4] A HIGH-TEMPERATURE DEFORMATION STAGE FOR X-RAY SYNCHROTRON TOPOGRAPHY - APPLICATIONS TO DISLOCATION MECHANISMS IN SILICON
GEORGE, A
MICHOT, G
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (AUG) : 412 - 416
[5] THE PROJECTION TOPOGRAPH - A NEW METHOD IN X-RAY DIFFRACTION MICRORADIOGRAPHY
LANG, AR
[J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (03): : 249 - 250
[6] STRAINING APPARATUS FOR DYNAMIC OBSERVATION BY X-RAY TOPOGRAPHY
NISHINO, Y
SUZUKI, M
TONO, T
SAKA, H
IMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : 1533 - 1539
[7] REAL-TIME X-RAY TOPOGRAPHY - DEFECT DYNAMICS AND CRYSTAL-GROWTH
QUEISSER, HJ
HARTMANN, W
HAGEN, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 897 - 906