NOISE-MARGIN LIMITATIONS ON GALLIUM-ARSENIDE VLSI

被引：5
作者：
LONG, SI
SUNDARAM, M
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 04期
关键词：
D O I：
10.1109/4.339
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：893 / 900
页数：8
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