CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF MG IMPLANTS IN GAAS

被引：24

作者：

YEO, YK

PARK, YS

PEDROTTI, FL

CHOE, BD

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45443

[2] MARQUETTE UNIV,DEPT PHYS,MILWAUKEE,WI 53233

[3] SEOUL NATL UNIV,DEPT PHYS,SEOUL,SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.331579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6148 / 6153

页数：6

共 9 条

[1] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J].

CHOE, BD ;

YEO, YK ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4742-4746

[2]

HOFKER WA, 1975, PHILIPS RES REP S, V8

[3] MG AND BE ION IMPLANTED GAAS [J].

HUNSPERGER, RG ;

JAMBA, DM ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+

[4]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[5] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J].

VASUDEV, PK ;

WILSON, RG ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :837-840

[6] COMPARATIVE STUDIES OF MG IMPLANTS IN GAAS IN DIFFERENT ANNEALING ENVIRONMENTS [J].

YEO, YK ;

PARK, YS ;

CHOE, BD .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :609-616

[7] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S-IMPLANTS IN GAAS [J].

YEO, YK ;

PARK, YS ;

KWOR, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1815-1817

[8] ELECTRICAL MEASUREMENTS AND OPTICAL ACTIVATION STUDIES IN MG-IMPLANTED GAAS [J].

YEO, YK ;

PARK, YS ;

YU, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3274-3281

[9]

ZOLCH R, 1976, ION IMPLANTATION SEM, P593

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