TRANSPORT LIMITS IN HIGH-SPEED QUANTUM-WELL LASERS - EXPERIMENT AND THEORY

被引:118
作者
NAGARAJAN, R
FUKUSHIMA, T
ISHIKAWA, M
BOWERS, JE
GEELS, RS
COLDREN, LA
机构
[1] Department of Electrical and Computer Engineering., University of California, Santa, Barbara
[2] Spectra Diode Laboratories, San Jose
[3] Department of Electrical and Computer Engineering, University of California, Toshiba Corp., Santa Barbara, Tokyo
[4] Toshiba Corp., Tokyo
关键词
D O I
10.1109/68.122335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We show experimentally that the modulation bandwidth of quantum well lasers can be reduced by a factor of six due to carrier transport across undoped layers of the laser as in the separate confinement heterostructure (SCH). We have derived analytical expressions for the modulation response function, resonance frequency, damping rate and K factor to include carrier transport, and show it to be responsible for a low frequency rolloff which limits the modulation response of quantum well lasers. In addition, we also show that carrier transport leads to a reduction in the effective differential gain, while the gain compression factor remains largely unaffected by it.
引用
收藏
页码:121 / 123
页数:3
相关论文
共 10 条
[1]   HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].
BOWERS, JE ;
HEMENWAY, BR ;
GNAUCK, AH ;
WILT, DP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844
[2]  
FUKUSHIMA T, 1991, IEEE PHOTONIC TECH L, V3, P691
[3]  
LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121
[4]   HIGH-SPEED INGAAS/GAAS STRAINED MULTIPLE QUANTUM-WELL LASERS WITH LOW DAMPING [J].
NAGARAJAN, R ;
FUKUSHIMA, T ;
BOWERS, JE ;
GEELS, RS ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1991, 58 (21) :2326-2328
[5]   EFFECTS OF CARRIER TRANSPORT ON HIGH-SPEED QUANTUM-WELL LASERS [J].
NAGARAJAN, R ;
FUKUSHIMA, T ;
CORZINE, SW ;
BOWERS, JE .
APPLIED PHYSICS LETTERS, 1991, 59 (15) :1835-1837
[6]   HIGH-SPEED MODULATION OF STRAINED-LAYER INGAAS-GAAS-ALGAAS RIDGE WAVE-GUIDE MULTIPLE QUANTUM-WELL LASERS [J].
OFFSEY, SD ;
LESTER, LF ;
SCHAFF, WJ ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1991, 58 (21) :2336-2338
[7]   FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
HILL, P ;
LANZISERA, V ;
POWAZINIK, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418
[8]   WELL-BARRIER HOLE BURNING IN QUANTUM-WELL LASERS [J].
RIDEOUT, W ;
SHARFIN, WF ;
KOTELES, ES ;
VASSELL, MO ;
ELMAN, B .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :784-786
[9]   ANOMALOUSLY HIGH DAMPING IN STRAINED INGAAS-GAAS SINGLE QUANTUM-WELL LASERS [J].
SHARFIN, WF ;
SCHLAFER, J ;
RIDEOUT, W ;
ELMAN, B ;
LAUER, RB ;
LACOURSE, J ;
CRAWFORD, FD .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (03) :193-195
[10]   THE EFFECT OF LATERAL CARRIER DIFFUSION ON THE MODULATION RESPONSE OF A SEMICONDUCTOR-LASER [J].
WILT, D ;
LAU, KY ;
YARIV, A .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :4970-4974