AN ATOMISTIC STUDY OF THE GAAS-PD INTERFACE

被引：15

作者：

KOBAYASHI, A ^{[1
]}

SAKURAI, T ^{[1
]}

HASHIZUME, T ^{[1
]}

SAKATA, T ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE, COLL INTEGRATED ARTS & SCI, SAKAI, OSAKA 591, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3448 / 3453

页数：6

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[7]

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