ELECTRO-OPTIC EFFECTS IN THE OPTICAL ANISOTROPIES OF (001) GAAS

被引：122

作者：

ACOSTAORTIZ, SE

LASTRASMARTINEZ, A

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.40.1426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1426 / 1429

页数：4

共 16 条

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[2]

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[4] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

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STUDNA, AA ;

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[5] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE REFLECTANCE SPECTRA OF SOME CUBIC SEMICONDUCTORS [J].

ASPNES, DE .

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[6] REFLECTANCE DIFFERENCE SPECTROSCOPY OF GAAS(110) AND INP(110) [J].

ASPNES, DE ;

STUDNA, AA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :546-549

[7] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].

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[8]

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[9]

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[10]

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