INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS

被引：32
作者：
HUMBERT, A
HOLLAN, L
BOIS, D
机构：
[1] LAB ELECT & PHYS APPL, F-94450 LIMEIL BREVANNES, FRANCE
[2] INST NATL SCI APPL LYON, PHYS MAT LAB, F-69621 VILLEURBANNE, FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期
关键词：
D O I：
10.1063/1.323275
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4137 / 4144
页数：8
相关论文
共 45 条
[1]  
ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1204
[2]   DEPENDENCE OF PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE ON TEMPERATURE OF ASCL3 [J].
AOKI, T ;
YAMAGUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (12) :1775-1782
[3]  
ASHEN DJ, 5TH P INT S GAAS
[4]   BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].
BLANC, J ;
WEISBERG, LR ;
BUBE, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&
[5]   PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTOR STATES IN N-TYPE GAAS [J].
BOIS, D ;
BEAUDET, D .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3882-3884
[6]   OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J].
BOIS, D ;
PINARD, P .
PHYSICAL REVIEW B, 1974, 9 (10) :4171-4177
[7]   PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J].
BOIS, D ;
BOULOU, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02) :671-675
[8]  
BOIS D, 1974, J PHYS-PARIS, V35, P241
[9]  
BOIS D, 1972, THESIS U LYON
[10]  
CADORET R, COMMUNICATION
12345