INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL)

[1] BERGER HH, 1972, IEEE J SOLID STATE C, VSC 7, P340

[2] BERGER HH, 1974, IEEE J SOLID STATE C, VSC 9, P211

[3] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (09) : 811 - &

[4] DUTTON RW, 1969, IEEE T ELECTRON DEVI, VED16, P458

[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[6] HART K, 1972, IEEE J SOLID STATE C, VSC 7, P346

[7] KLAASSEN FM, 1973, DEVICE PHYSICS INTEG

[8] MEMELINK OW, 1972, MAY INT S LOW POW DI

[9] MERTENS RP, 1973, IEEE T ELECTRON DEVI, VED20, P772

[10] RECOMBINATION DEPENDENT CHARACTERISTICS OF SILICON P+-N-N+ EPITAXIAL DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 311 - +

[1] BERGER HH, 1972, IEEE J SOLID STATE C, VSC 7, P340

[2] BERGER HH, 1974, IEEE J SOLID STATE C, VSC 9, P211

[3] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (09) : 811 - &

[4] DUTTON RW, 1969, IEEE T ELECTRON DEVI, VED16, P458

[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[6] HART K, 1972, IEEE J SOLID STATE C, VSC 7, P346

[7] KLAASSEN FM, 1973, DEVICE PHYSICS INTEG

[8] MEMELINK OW, 1972, MAY INT S LOW POW DI

[9] MERTENS RP, 1973, IEEE T ELECTRON DEVI, VED20, P772

[10] RECOMBINATION DEPENDENT CHARACTERISTICS OF SILICON P+-N-N+ EPITAXIAL DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 311 - +