INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL)

被引：74

作者：

BERGER, HH ^{[1
]}

机构：

[1] IBM LABS,BOEBLINGEN,WEST GERMANY

来源：

关键词：

D O I：

10.1109/JSSC.1974.1050506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：218 / 227

页数：10

共 12 条

[1]

BERGER HH, 1972, IEEE J SOLID STATE C, VSC 7, P340

[2]

BERGER HH, 1974, IEEE J SOLID STATE C, VSC 9, P211

[3] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J].

CHOU, S .

[4]

DUTTON RW, 1969, IEEE T ELECTRON DEVI, VED16, P458

[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J].

EBERS, JJ ;

MOLL, JL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12) :1761-1772

[6]

HART K, 1972, IEEE J SOLID STATE C, VSC 7, P346

[7]

KLAASSEN FM, 1973, DEVICE PHYSICS INTEG

[8]

MEMELINK OW, 1972, MAY INT S LOW POW DI

[9]

MERTENS RP, 1973, IEEE T ELECTRON DEVI, VED20, P772

VENKATESWARAN, K ;

ROULSTON, DJ .