INFLUENCE OF THE ANTI REFLECTIVE COATING ON THE ELECTROMIGRATION RESISTANCE OF 0.5 MU-M TECHNOLOGY METAL-2 LINE STRUCTURES

被引：7

作者：

STEVENS, R ^{[1
]}

WITVROUW, A ^{[1
]}

ROUSSEL, PJ ^{[1
]}

MAEX, K ^{[1
]}

MEYNEN, H ^{[1
]}

CUTHBERTSON, A ^{[1
]}

机构：

[1] ALCATEL MIETEC,B-9700 OUDENAARDE,BELGIUM

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00120-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In order to optimise the 0.5 mu m CMOS technology, electromigration (EM) tests were performed at different temperature and current stresses on metal-2 line structures with 2 different anti-reflective coatings (ARC). The failure data were analysed with an in-house made software package ''FAILURE'', based on Black's equation MTTF=Aj(-n) exp (E(a)/kT). Both cases fulfill the criterium of less than 0.01% failures within 25 years under use conditions, but the Ti/TiN ARC had a better EM resistance than the TiN ARC. In the case of a Ti/TiN ARC a ''TiAl3''-layer was present, possibly acting as an alternative current path. This layer is formed during the thermal process steps in the 0.5 mu m triple layer metallisation (TLM) processing of the wafer. This could explain the better EM resistance for the Ti/TiN ARC case.

引用

页码：208 / 214

页数：7