TRANSPORT-PROPERTIES OF A WIDE-QUANTUM-WELL VELOCITY MODULATION TRANSISTOR STRUCTURE

被引：9

作者：

KUROBE, A ^{[1
]}

CASTLETON, IM ^{[1
]}

LINFIELD, EH ^{[1
]}

GRIMSHAW, MP ^{[1
]}

BROWN, KM ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 09期

关键词：

D O I：

10.1088/0268-1242/9/9/029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results are presented on electron transport in a wide-quantum-well dual-channel velocity modulation transistor, where both front and back gates modulate the resistance through variation of the mobility, whilst maintaining a constant carrier concentration. A mobility modulation ratio of over 100 is achieved at a carrier concentration of 2 x 10(11) cm-2 by transferring electrons between the two conducting channels which are 100 nm apart. Mobility modulation due to deformation of the wavefunctions is also observed when one of the channels is fully depleted.

引用

页码：1744 / 1747

页数：4

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