PHOTOEMISSION-STUDIES OF THE INTERACTION OF HYDROGEN PLASMAS WITH GAAS (001)

被引：30

作者：

FRIEDEL, P ^{[1
]}

LARSEN, PK ^{[1
]}

GOURRIER, S ^{[1
]}

CABANIE, JP ^{[1
]}

GERITS, WM ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：675 / 680

页数：6

共 16 条

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[3]

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[4]

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[5]

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[6] INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES [J].

FRIEDEL, P ;

GOURRIER, S .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :509-511

[7]

FRIEDEL P, 1982, THESIS ORSAY

[8] PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA [J].

GOURRIER, S ;

SMIT, L ;

FRIEDEL, P ;

LARSEN, PK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3993-3997

[9]

LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[10] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE [J].

LARSEN, PK ;

NEAVE, JH ;

VANDERVEEN, JF ;

DOBSON, PJ ;

JOYCE, BA .

PHYSICAL REVIEW B, 1983, 27 (08) :4966-4977

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