PREPARATION OF BETA-SIC FILMS BY RF SPUTTERING

被引：5

作者：

NISHINO, S ^{[1
]}

MATSUNAMI, H ^{[1
]}

ODAKA, M ^{[1
]}

TANAKA, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,KYOTO 606,JAPAN

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90096-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L27 / L29

页数：3

共 9 条

[1]

BERMAN I, 1973, SILICON CARBIDE 1973, P42

[2] SINGLE-CRYSTAL BETA-SIC FILMS BY REACTIVE SPUTTERING [J].

HAQ, KE .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :255-256

[3]

HAQ KE, 1969, J APPL PHYS, V40, P430

[4] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J].

LEARN, AJ ;

HAQ, KE .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :26-&

[5] GROWTH MORPHOLOGY AND CRYSTALLOGRAPHIC ORIENTATION OF BETA-SIC FILMS FORMED BY CHEMICAL CONVERSION [J].

LEARN, AJ ;

KHAN, IH .

THIN SOLID FILMS, 1970, 5 (03) :145-&

[6]

LELY JA, 1955, BER DTSCH KERAM GES, V32, P226

[7] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

[8] INFRARED PROPERTIES OF HEXAGONAL SILICON CARBIDE [J].

SPITZER, WG ;

KLEINMAN, D ;

WALSH, D .

PHYSICAL REVIEW, 1959, 113 (01) :127-132

[9]

SUZUKI A, 1974, OYO BUTSURI, V43, P968

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