A Protective Layer on the Active Layer of Al-Zn-Sn-O Thin-Film Transistors for Transparent AMOLEDs

被引：9

作者：

Cho, Doo-Hee ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Yang, Shinhyuk ^{[1
]}

Byun, Chunwon ^{[1
]}

Cho, Kyoung Ik ^{[1
]}

Ryu, Minki ^{[1
]}

Chung, Sung Mook ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

Yoon, Sung Min ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

机构：

[1] ETRI, Transparent Display Team, Daejeon 305350, South Korea

来源：

JOURNAL OF INFORMATION DISPLAY | 2009年 / 10卷 / 04期

关键词：

oxide; thin-film transistor; protective layer; aluminum; tin; zinc;

D O I：

10.1080/15980316.2009.9652097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an Al2O3 protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in O-2 and with water vapor PLs, but the bias stability of the TFTs annealed in O-2 and with water vapor PLs was excellent.

引用

页码：137 / 142

页数：6

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