AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)

被引：32

作者：

Aliyu, YH ^{[1
]}

Morgan, DV ^{[1
]}

Thomas, H ^{[1
]}

Bland, SW ^{[1
]}

机构：

[1] EPITAXIAL PROD INT LTD,CARDIFF CF3 0EG,S GLAM,WALES

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 25期

关键词：

light emitting diodes; indium tin oxide;

D O I：

10.1049/el:19951520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlCaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order of 4.5 Omega/rectangle with up to 90% transmission in the visible region of the spectrum. In all cases, the der ices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices.

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页码：2210 / 2212

页数：3

相关论文

共 9 条

[1] INDIUM TIN OXIDE AS TRANSPARENT ELECTRODE MATERIAL FOR ZNSE-BASED BLUE QUANTUM-WELL LIGHT EMITTERS [J].

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

XIE, W ;

GRILLO, DC ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2825-2827

[2] TWOFOLD EFFICIENCY IMPROVEMENT IN HIGH-PERFORMANCE ALGAINP LIGHT-EMITTING-DIODES IN THE 555-620 NM SPECTRAL REGION USING A THICK GAP WINDOW LAYER [J].

HUANG, KH ;

YU, JG ;

KUO, CP ;

FLETCHER, RM ;

OSENTOWSKI, TD ;

STINSON, LJ ;

CRAFORD, MG ;

LIAO, ASH .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1045-1047

[3] VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES [J].

KISH, FA ;

STERANKA, FM ;

DEFEVERE, DC ;

VANDERWATER, DA ;

PARK, KG ;

KUO, CP ;

OSENTOWSKI, TD ;

PEANASKY, MJ ;

YU, JG ;

FLETCHER, RM ;

STEIGERWALD, DA ;

CRAFORD, MG ;

ROBBINS, VM .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2839-2841

[4] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[5] HIGHLY RELIABLE OPERATION OF INDIUM TIN OXIDE ALGAINP ORANGE LIGHT-EMITTING-DIODES [J].

LIN, JF ;

WU, MC ;

JOU, MJ ;

CHANG, CM ;

LEE, BJ ;

TSAI, YT .

ELECTRONICS LETTERS, 1994, 30 (21) :1793-1794

[6] OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

MATIN, MA ;

JEZIERSKI, AF ;

BASHAR, SA ;

LACKLISON, DE ;

BENSON, TM ;

CHENG, TS ;

ROBERTS, JS ;

SALE, TE ;

ORTON, JW ;

FOXON, CT ;

REZAZADEH, AA .

ELECTRONICS LETTERS, 1994, 30 (04) :318-320

[7] THE THERMAL-STABILITY OF INDIUM TIN OXIDE/N-GAAS SCHOTTKY CONTACTS [J].

MORGAN, DV ;

ALIYU, Y ;

BUNCE, RW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 133 (01) :77-93

[8]

MORGAN DV, 1993, ELECTRON LETT, V22, P1991

[9] VISIBLE-WAVELENGTH SURFACE-EMITTING DEVICES WITH A 15-FOLD IMPROVEMENT IN ELECTRICAL-TO-OPTICAL POWER CONVERSION EFFICIENCY [J].

THOMAS, KJ ;

GUIDO, LJ ;

BEGGY, JC ;

SMITH, S ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1995, 66 (02) :127-129