GIANT MAGNETORESISTANCE AND MAGNETIC-ANISOTROPY OF CO9FE/CU/CO9FE MULTILAYER THIN-FILMS ON AN MGO(110) SUBSTRATE

被引:0
|
作者
INOMATA, K
SAITO, Y
机构
关键词
GIANT MAGNETORESISTANCE EFFECT; MAGNETIC ANISOTROPY; MAGNETIZATION PROCESSES; THIN FIRM SANDWICHES; CO9FE; CU;
D O I
10.1002/eej.4391150601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetoresistive effects have been investigated using Co9Fe/Cu/Co9Fe that were deposited on an MgO(110) substrate by ion beam sputtering with a 21-A-thick CU layer and with various thicknesses of the Co9Fe films. The influence of a 50-A-thick Fe buffer layer has also been investigated. In addition to a cubic symmetry anisotropy (K-l), an in-plane uniaxial magnetic anisotropy (K-u) was induced, which easy axis is parallel to the (110) plane of the MgO substrate and the (001) plane with and without the 50-A-thick Fe buffer layer, respectively. The magnetoresistance (MR) ratio decreased monotonically with increasing thickness of the Co9Fe films from 25 A to 70 A. A maximum MR ratio of 11.5 percent was obtained at room temperature. With increasing magnetic field, the MR ratio reached a plateau gradually after a steep drop at small magnetic fields without the Fe buffer layer. It reached a plateau rapidly at small magnetic fields with the Fe buffer layer. By considering both K-u and K-l, these behaviors can be accounted for by the magnetization processes involved.
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页码:1 / 7
页数:7
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