ATOMIC-LAYER CONTROL IN GAP GROWTH BY LASER-TRIGGERED CHEMICAL BEAM EPITAXY

被引：4
|
作者：
YOSHIMOTO, M
VACCARO, P
HASHIMOTO, T
KAJIMOTO, A
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto
[2] On leave from Nisshin Steel Co Ltd., Tachikawa, Tokyo, 190
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3A期
关键词：
CHEMICAL BEAM EPITAXY; GAP; PHOTO-EXCITED PROCESS; METALORGANICS; MOLECULAR BEAM EPITAXY; SURFACE REACTION; ATOMIC LAYER EPITAXY;
D O I：
10.1143/JJAP.32.L335
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Control of GaP growth at the atomic-layer level has been achieved by laser-triggering in chemical beam epitaxy (CBE) under a simultaneous supply of triethylgallium (TEGa) and thermally cracked PH3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet (UV) light emitted from a N2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This preliminary result will open a new atomic-layer epitaxial mode by means of UV-laser irradiation without an alternating supply of source gases in CBE.
引用
收藏
页码：L335 / L337
页数：3
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