ATOMIC-LAYER CONTROL IN GAP GROWTH BY LASER-TRIGGERED CHEMICAL BEAM EPITAXY

被引：4
|
作者：
YOSHIMOTO, M
VACCARO, P
HASHIMOTO, T
KAJIMOTO, A
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto
[2] On leave from Nisshin Steel Co Ltd., Tachikawa, Tokyo, 190
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3A期
关键词：
CHEMICAL BEAM EPITAXY; GAP; PHOTO-EXCITED PROCESS; METALORGANICS; MOLECULAR BEAM EPITAXY; SURFACE REACTION; ATOMIC LAYER EPITAXY;
D O I：
10.1143/JJAP.32.L335
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Control of GaP growth at the atomic-layer level has been achieved by laser-triggering in chemical beam epitaxy (CBE) under a simultaneous supply of triethylgallium (TEGa) and thermally cracked PH3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet (UV) light emitted from a N2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This preliminary result will open a new atomic-layer epitaxial mode by means of UV-laser irradiation without an alternating supply of source gases in CBE.
引用
收藏
页码：L335 / L337
页数：3
相关论文
共 50 条
  • [1] Atomic-layer epitaxy of silicon on (100) surface
    Satoh, Y
    Ikeda, K
    Sugahara, S
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5732 - 5736
  • [2] Hetero atomic-layer epitaxy of Ge on Si(100)
    Matsuyama, M
    Sugahara, S
    Ikeda, K
    Uchida, Y
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5A): : 2536 - 2540
  • [3] Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy
    Kim, Y. G.
    Nam, Y. S.
    Baek, K. S.
    Chang, S. K.
    CURRENT APPLIED PHYSICS, 2009, 9 (06) : 1304 - 1306
  • [4] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF HETEROEPITAXY IN CHEMICAL VAPOR-DEPOSITION REACTOR - ATOMIC-LAYER EPITAXY OF GAAS, ALAS AND GAP ON SI
    KITAHARA, K
    OZEKI, M
    NAKAJIMA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A): : 1051 - 1055
  • [5] REACTION-MECHANISMS OF TERTIARYBUTYLARSINE ON GAAS (001) SURFACES AND ITS RELEVANCE TO ATOMIC LAYER EPITAXY AND CHEMICAL BEAM EPITAXY
    MAA, BY
    DAPKUS, PD
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) : 589 - 593
  • [6] Si atomic-layer epitaxy using thermally cracked Si2H6
    Suda, Y
    Misato, Y
    Shiratori, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2390 - 2392
  • [7] Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method
    Koukitu, A
    Kumagai, Y
    Taki, T
    Seki, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 4980 - 4982
  • [8] Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
    Agekyan, V.
    Chukeev, M.
    Karczewski, G.
    Serov, A.
    Filosofov, N.
    Reznitsky, A.
    SEMICONDUCTORS, 2019, 53 (16) : 2060 - 2063
  • [9] Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
    V. Agekyan
    M. Chukeev
    G. Karczewski
    A. Serov
    N. Filosofov
    A. Reznitsky
    Semiconductors, 2019, 53 : 2060 - 2063
  • [10] Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure
    Ichino, K
    Akiyoshi, S
    Kawakami, T
    Misasa, H
    Kitagawa, M
    Kobayashi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (10A): : L1283 - L1286
12345